Memristive Devices for Computing: Mechanisms, Applications and Challenges (English)
- New search for: Yang, J.J.
- New search for: Choi, B.J.
- New search for: Zhang, M.X.
- New search for: Torrezan, A.C.
- New search for: Strachan, J.P.
- New search for: Williams, R.S.
- New search for: Electrochemical Society
- New search for: Yang, J.J.
- New search for: Choi, B.J.
- New search for: Zhang, M.X.
- New search for: Torrezan, A.C.
- New search for: Strachan, J.P.
- New search for: Williams, R.S.
- New search for: Claeys, C.
- New search for: Electrochemical Society
In:
ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others]
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9-16
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2013
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Memristive Devices for Computing: Mechanisms, Applications and Challenges
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Contributors:Yang, J.J. ( author ) / Choi, B.J. ( author ) / Zhang, M.X. ( author ) / Torrezan, A.C. ( author ) / Strachan, J.P. ( author ) / Williams, R.S. ( author ) / Claeys, C. / Electrochemical Society
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Conference:Symposium; 8th, ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others] ; 2013 ; San Francisco, CA
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Published in:ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others] , 9 ; 9-16ECS TRANSACTIONS ; 58, 9 ; 9-16
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, N.J.
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Publication date:2013-01-01
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Size:8 pages
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Remarks:Includes bibliographical references and index
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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FDSOI Technology: A Power Efficient Solution Down to 10nmFaynot, O. / Vinet, M. / Fenouillet, C. / Weber, O. / Perreau, P. / Grenouillet, L. / Andrieu, F. / Poiroux, T. / Deleonibus, S. / Electrochemical Society et al. | 2013
- 9
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Memristive Devices for Computing: Mechanisms, Applications and ChallengesYang, J.J. / Choi, B.J. / Zhang, M.X. / Torrezan, A.C. / Strachan, J.P. / Williams, R.S. / Electrochemical Society et al. | 2013
- 17
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(Invited) Low Temperature Direct Bonding 3D Stacking Technologies for High Density Device IntegrationDi Cioccio, L. / Radu, I. / Gaudin, G. / Lacave, T. / Baudin, F. / Sadaka, M. / Signamarcheix, T. / Electrochemical Society et al. | 2013
- 29
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(Invited) Mn~5Ge~3C~0~.~8 Contacts for Spin Injection Into GeFischer, I.A. / Surgers, C. / Petit, M. / Le Thanh, V. / Schulze, J. / Electrochemical Society et al. | 2013
- 29
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Mn5Ge3C0.8 Contacts for Spin Injection into GeFischer, I.A. / Sürgers, C. / Petit, M. / Thanh, V. Le / Schulze, J. et al. | 2013
- 37
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(Invited) Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbraun, E. / Electrochemical Society et al. | 2013
- 37
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Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbaum, E. et al. | 2013
- 43
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Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability ImprovementShao, I. / Cheng, T. / Findeis, P. / Kelly, J. / Ahmed, S. / Angyal, M. / Xu, Y. / Li, B. / Tinkler, J. / Lustig, N. et al. | 2013
- 49
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ALD W CMP for HKMGYang, T. / Wang, G. / Xu, Q. / Lu, Y. / Yu, J. / Cui, H. / Yan, J. / Li, J. / Zhao, C. / Electrochemical Society et al. | 2013
- 53
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Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier HeightYamamoto, K. / Asakawa, K. / Wang, D. / Nakashima, H. / Electrochemical Society et al. | 2013
- 63
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(Invited) Single Electron and Single Atom CMOS PerspectivesJehl, X. / Sanquer, M. / Vinet, M. / Wacquez, R. / Electrochemical Society et al. | 2013
- 63
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Single Electron and Single Atom CMOS PerspectivesJehl, Xavier / Sanquer, Marc / Vinet, M. / Wacquez, Romain et al. | 2013
- 73
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High-speed operation of Si single-electron transistorTakahashi, Yasuo / Takenaka, Hiroto / Uchida, Takafumi / Arita, Masashi / Fujiwara, Akira / Inokawa, Hiroshi et al. | 2013
- 73
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(Invited) High-Speed Operation of Si Single-Electron TransistorTakahashi, Y. / Takenaka, H. / Uchida, T. / Arita, M. / Fujiwara, A. / Inokawa, H. / Electrochemical Society et al. | 2013
- 81
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Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, Paul R. / Ramesh, Anisha / Loo, Roger et al. | 2013
- 81
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(Invited) Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, P. / Ramesh, A. / Loo, R. / Electrochemical Society et al. | 2013
- 89
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Dopant-atom-based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. et al. | 2013
- 89
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(Invited) Dopant-Atom-Based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. / Electrochemical Society et al. | 2013
- 97
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(Invited) Wide Bandgap Heterojunctions on Crystalline SiliconSturm, J. / Avasthi, S. / Nagamatsu, K. / Jhaveri, J. / McClain, W.E. / Man, G. / Kahn, A. / Schwartz, J. / Wagner, S. / Electrochemical Society et al. | 2013
- 97
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Wide Bandgap Heterojunctions on Crystalline SiliconSturm, J.C. / Avasthi, S. / Nagamatsu, K. / Jhaveri, J. / McClain, W. / Man, G. / Kahn, A. / Schwartz, J. / Wagner, S. et al. | 2013
- 109
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(Invited) Status and Future of IC Analog TechnologiesBergemont, A. / Electrochemical Society et al. | 2013
- 109
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Status and Future of IC Analog TechnologiesBergemont, Albert et al. | 2013
- 115
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(Invited) MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rucker, H. / Yamamoto, Y. / Zimmermann, L. / Electrochemical Society et al. | 2013
- 115
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MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rücker, H. / Yamamoto, Y. / Zimmermann, L. et al. | 2013
- 125
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Bio-MEMS Chip for Bacteria Detection - A Challenge of Si Technology to Biomedical FieldIshii, H. / Sawada, K. / Ishida, M. / Machida, K. / Iida, K. / Saito, M. / Yoshida, S. et al. | 2013
- 125
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(Invited) Bio-MEMS Chip for Bacteria Detection -A Challenge of Si Technology to Biomedical Field-Ishii, H. / Sawada, K. / Ishida, M. / Machida, K. / Iida, K.I. / Saito, M. / Yoshida, S.I. / Electrochemical Society et al. | 2013
- 137
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Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokohama, M. / Takenaka, M. et al. | 2013
- 137
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(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokoyama, M. / Takenaka, M. / Electrochemical Society et al. | 2013
- 149
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Heteroepitaxial Growth of Sn-related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, Osamu / Taoka, Noriyuki / Asano, Takanori / Yamaha, Takashi / Kurosawa, Masashi / Sakashita, Mitsuo / Zaima, Shigeaki et al. | 2013
- 149
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(Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, O. / Taoka, N. / Asano, T. / Yamaha, T. / Kurosawa, M. / Sakashita, M. / Zaima, S. / Electrochemical Society et al. | 2013
- 157
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(Invited) The Effect of Carbon Doping on Structural and Magnetic Properties of Mn~5Ge~3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Le Thanh, V. / Electrochemical Society et al. | 2013
- 157
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The Effect of Carbon Doping on Structural and Magnetic Properties of Mn5Ge3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Thanh, V. Le et al. | 2013
- 167
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(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, H. / Yamamoto, K. / Wang, D. / Electrochemical Society et al. | 2013
- 167
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Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, Hiroshi / Yamamoto, Keisuke / Wang, Dong et al. | 2013
- 179
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High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature Sn Induced-Melting GrowthKinoshita, Y. / Matsumura, R. / Sadoh, T. / Nishimura, T. / Miyao, M. / Electrochemical Society et al. | 2013
- 185
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Characterization of Local Strain Structures in Heteroepitaxial Ge~1~-~xSn~x/Ge Microstructures by Using Microdiffraction MethodIke, S. / Moriyama, Y. / Kurosawa, M. / Taoka, N. / Nakatsuka, O. / Imai, Y. / Kimura, S. / Tezuka, T. / Zaima, S. / Electrochemical Society et al. | 2013
- 195
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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, M. / Murota, J. / Electrochemical Society et al. | 2013
- 195
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Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, Masao / Murota, Junichi et al. | 2013
- 201
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Atomically Flat Germanium (111) Surface by Hydrogen AnnealingNishimura, T. / Kabuyanagi, S. / Lee, C. / Yajima, T. / Nagashio, K. / Toriumi, A. / Electrochemical Society et al. | 2013
- 207
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Formation and Characterization of Strained Si~1~-~XGe~x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingUeno, N. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 213
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. et al. | 2013
- 213
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(Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. / Electrochemical Society et al. | 2013
- 223
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Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingAbe, Y. / Kubota, S. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 231
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(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, S. / Ikeda, M. / Makihara, K. / Electrochemical Society et al. | 2013
- 231
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Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, Seiichi / Ikeda, Mitsuhisa / Makihara, Katsunori et al. | 2013
- 239
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Source and Drain Contact Module for FDSOI MOSFETs: Silicidation and Strain EngineeringCarron, V. / Nemouchi, F. / Hartmann, J.M. / Cooper, D. / Damlencourt, J.F. / Bernasconi, S. / Favier, S. / Morand, Y. / Electrochemical Society et al. | 2013
- 249
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Fin Doping by Hot Implant for 14nm FinFET Technology and BeyondWood, B.S. / Khaja, F.A. / Colombeau, B.P. / Sun, S. / Waite, A. / Jin, M. / Chen, H. / Chan, O. / Thanigaivelan, T. / Pradhan, N. et al. | 2013
- 257
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Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGeChikita, H. / Matsumura, R. / Sadoh, T. / Miyao, M. / Electrochemical Society et al. | 2013
- 265
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Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETsTsuchiya, T. / Tamura, N. / Sakakidani, A. / Sonoda, K. / Kamei, M. / Yamakawa, S. / Kuwabara, S. et al. | 2013
- 265
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(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETsTsuchiya, T. / Tamura, N. / Sakakidani, A. / Sonoda, K. / Kamei, M. / Yamakawa, S. / Kuwabara, S. / Electrochemical Society et al. | 2013
- 281
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Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETsSimoen, E.R. / Lee, J.W. / Veloso, A. / Paraschiv, V. / Horiguchi, N. / Claeys, C. / Electrochemical Society et al. | 2013
- 293
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Resistive Switching Properties of SiO~x/TiO~2 Multi-Stack in Ti-Electrode MIM DiodesOhta, A. / Makihara, K. / Fukusima, M. / Murakami, H. / Higashi, S. / Miyazaki, S. / Electrochemical Society et al. | 2013
- 301
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Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al~2O~3/Ge InterfaceShibayama, S. / Kato, K. / Sakashita, M. / Takeuchi, W. / Taoka, N. / Nakatsuka, O. / Zaima, S. / Electrochemical Society et al. | 2013
- 309
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High Electron Mobility in Germanium Junctionless n-MOSFETsKabuyanagi, S. / Nishimura, T. / Nagashio, K. / Toriumi, A. / Electrochemical Society et al. | 2013