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(001) textured PbTiO3 thin films grown on redopingn-Si by metalorganic chemical vapor deposition under reduced pressure
National licenceSpringer Verlag | 1996| -
Achieving high-performance planar perovskite solar cells with co-sputtered Co-doping NiOx hole transport layers by efficient extraction and enhanced mobility
National licenceRoyal Society of Chemistry | 2016| -
AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts
National licenceIOP Institute of Physics | 2004| -
Anomalous tunable visible to near infrared emission in the Mn2+-doped spinel MgGa2O4 and room-temperature upconversion in the Mn2+ and Yb3+-codoped spinel
National licenceRoyal Society of Chemistry | 2014| -
A Novel Short-Term Load Forecasting Technique Using Wavelet Transform Analysis
National licenceTaylor & Francis Verlag | 2000| -
A Remote Intelligent Monitoring System for Large Scale Photovoltaic Power Plant
National licenceTrans Tech Publications | 2011|Contributors: Yu, D. J., Qi, Y. -
Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena
National licenceSpringer Verlag | 1991| -
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
National licenceIOP Institute of Physics | 2008| -
Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure
National licenceIOP Institute of Physics | 2008| -
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
National licenceIOP Institute of Physics | 2005| -
Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy
National licenceIOP Institute of Physics | 2006| -
Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
National licenceIOP Institute of Physics | 2004| -
Crystal structures and optical properties of new quaternary strontium europium aluminate luminescent nanoribbons
National licenceRoyal Society of Chemistry | 2015| -
Current conduction in bound-to-miniband transition III-V multiquantum well/superlattice infrared photodetectors
National licenceIOP Institute of Physics | 1993| -
Deep level transient spectroscopy of DX centres in Al0.38Ga0.62As:Te under uniaxial stress
National licenceIOP Institute of Physics | 1991| -
Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
National licenceIOP Institute of Physics | 2012| -
Discussion on Electromagnetic Radiation Protection Standard of Light Industrial Equipments
National licenceTrans Tech Publications | 2010|Contributors: Yu, G.Y., Li, Y. -
Dynamic hysteresis of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
National licenceElsevier | 2002| -
Effect of lanthanoid organometallic compounds on holographic storage characteristics of doped PQ/poly(hydroxyethyl methacrylate-co-methyl methacrylate) hybrids
National licenceIOP Institute of Physics | 2009| -
Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
National licenceIOP Institute of Physics | 2010| -
Efficient all polymer solar cells from layer-evolved processing of a bilayer inverted structure
National licenceRoyal Society of Chemistry | 2013| -
Enhanced dielectric properties of PVDF-HFP/BaTiO3-nanowire composites induced by interfacial polarization and wire-shape
National licenceRoyal Society of Chemistry | 2015| -
Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes
National licenceIOP Institute of Physics | 2006| -
Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography
National licenceIOP Institute of Physics | 2009| -
Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface
National licenceIOP Institute of Physics | 2010| -
Evaluation of propylene-, meta-, and para-linked triazine and tert-butyltriphenylamine as bipolar hosts for phosphorescent organic light-emitting diodes
National licenceRoyal Society of Chemistry | 2013| -
Evidence for coherent interaction between quantum well states in triple barrier heterostructures
National licenceElsevier | 1990| -
Extension of the associated solution model to ternary metal-sulfur melts: Cu-Ni-S
National licenceSpringer Verlag | 1991| -
Fabrication of crack-free photonic crystal films via coordination of microsphere terminated dendrimers and their performance in invisible patterned photonic displays
National licenceRoyal Society of Chemistry | 2016| -
Fabrication of periodic microstructures by holographic photopolymerization with a low-power continuous-wave laser of 532 nm
National licenceIOP Institute of Physics | 2006| -
Fast intra-modal and inter-modal wavelength switching of a high-speed SG-DBR laser for dynamic wavelength routing
National licenceSpringer Verlag | 2001| -
Formation of the ferroelectric domains in epitaxial PbTiO3 thin films grown by metalorganic chemical vapor deposition
National licenceSpringer Verlag | 1997| -
Formed insulator thin films in non-heated cathodes
National licenceTaylor & Francis Verlag | 1992| -
Gearbox Fault Diagnosis Research Based on Wavelet Transform
National licenceTrans Tech Publications | 2013|Contributors: Yu, G.B., Zhao, Y. -
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
National licenceIOP Institute of Physics | 2011| -
High-speed (>10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
National licenceIOP Institute of Physics | 2004| -
Influence of dot size distribution and interlayer thickness on the optical property of closely stacked InAs/GaAs quantum dots with growth interruption
National licenceIOP Institute of Physics | 2008| -
Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure
National licenceIOP Institute of Physics | 2005| -
Influence of p-doping hole transport layer on the performance of organic light-emitting devices
National licenceIOP Institute of Physics | 2008| -
Influence of the Pt barrier on Ti/Al/Pt/Au ohmic contacts to n-GaN studied by Rutherford backscattering spectrometry and x-ray diffraction
National licenceIOP Institute of Physics | 2006| -
Influence of thermal treatment and electron-blocking layers on the optical properties of InGaP/InGaAlP MQW structures for red RCLEDs
National licenceIOP Institute of Physics | 2010| -
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
National licenceSpringer Verlag | 1998| -
Integrated heterostructure devices based on II–VI compound semiconductors
National licenceSpringer Verlag | 1993| -
Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts
National licenceIOP Institute of Physics | 2008| -
Long hole spin relaxation times in diluted magnetic semiconductor heterostructures
National licenceSpringer Verlag | 1993| -
Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors
National licenceRoyal Society of Chemistry | 2016| -
Low voltage stress-induced leakage current as a probe of interface defects and a monitor of the oxide reliability
National licenceIOP Institute of Physics | 2005| -
Measurement of Strain Induced by Impact with Fiber Bragg Grating
National licenceTrans Tech Publications | 2008|Contributors: Zhu, Ping Yu, Lin, Y. -
Mechanisms of current flow in p-TlGaSe2 single crystals
National licenceIOP Institute of Physics | 2006|
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